BiFeO3(00l)/LaNiO3/Si thin films with enhanced polarization: an all-solution approach
BiFeO3(00l)/LaNiO3/Si thin films with enhanced polarization: an all-solution approach
复制标题
增强极化的 BiFeO3(00l)/LaNiO3/Si 薄膜：全解决方案
DOI：
10.1039/c6ra16388b
复制
发表时间：
2016-01-01
期刊：
影响因子：
3.9
通讯作者：
Sun, Yuping
中科院分区：
文献类型：
--
作者：
Jin, Linghua;Tang, Xianwu;Sun, Yuping
采用化学溶液沉积法在LaNiO_3包覆硅衬底上制备了厚度大于400 nm的BiFeO(BFO)多铁性薄膜。所制备的BFO/LaNiO_3/Si薄膜具有强烈的(00l)择优取向，具有扭曲的R3c对称的菱面体结构。研究了500-650℃温度范围内的退火温度对组织和性能的影响。当退火温度升高到600℃时，(00l)择优取向增强，晶粒度增大，而过高的退火温度会导致取向和组织的恶化。研究了BFO薄膜的介电、漏电和铁电性能随退火温度的变化规律，结果表明低温退火后的BFO薄膜具有良好的介电、漏和铁电性能。讨论了退火温度效应的机理。研究结果为实现大面积BFO薄膜在硅片上的低成本集成提供了一条有效的途径。
Multiferroic BiFeO3 (BFO) thin films with a thickness larger than 400 nm are grown on solution-derived LaNiO3 coated Si substrates via chemical solution deposition. The prepared BFO/LaNiO3/Si thin films are strongly (00l)-oriented with a distorted rhombohedral structure of R3c symmetry. The effects of the annealing temperature within the temperature range of 500–650 °C on the microstructures and properties are investigated. With an annealing temperature increasing to 600 °C, the (00l) orientation is enhanced and the grain size is increased, whereas a higher annealing temperature will lead to the deterioration of the orientation and microstructures. The annealing temperature dependent dielectric, leakage and ferroelectric properties are investigated, showing excellent properties for the low temperature annealed BFO thin films. The mechanisms about annealing temperature effects are discussed. The results will provide an effective route to realize the integration of large-area BFO thin films on Si wafers by an all-solution approach with low cost.