Fabrication of out-of-plane curved surfaces in Si by utilizing RIE lag
Fabrication of out-of-plane curved surfaces in Si by utilizing RIE lag
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利用 RIE 滞后在 Si 中制造面外曲面
DOI：
10.1109/memsys.2002.984225
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
K. Najafi
中科院分区：
文献类型：
--
作者：
T. Chou;K. Najafi
本文报道了一种利用单一掩模和刻蚀步骤在硅中构建平面外曲面的批量制造技术的发展。利用硅中的深度反应离子刻蚀(DRIE)滞后效应，人们可以通过调整沟槽刻蚀开口来创建任意平面外的曲线轮廓。通过使用2/SPL亩/m到50/SPL Mu/m宽的沟槽，制作出了最大深度大于15/SPL Mu/m的光滑曲面(1200/SPL Mu/m/1200/SPL Mu/m)。该技术对于静电MEMS致动器的制造特别有吸引力。制作了一种用于垂直静电执行器的测试曲线驱动电极。
This paper reports the development of a batch fabrication technology for constructing out-of-plane curved surfaces in silicon using a single masking and etching step. With the well-characterized Deep Reactive Ion Etch (DRIE) lag effect in silicon, one can create an arbitrary out-of-plane curved profile by adjusting the trench etch openings. By using trenches ranging from 2 /spl mu/m to 50 /spl mu/m wide, a smooth curved surface (1200 /spl mu/m /spl times/ 1200 /spl mu/m) with maximum depth more than 15 /spl mu/m has been fabricated. The proposed technology is especially attractive for the fabrication of electrostatic MEMS actuators. A test curved drive electrode for vertical electrostatic actuators is also fabricated.