A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development
A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development
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用于碳化硅 MOSFET 有源栅极驱动开发的分辨率为 2.5 ns 的六级栅极驱动器拓扑
DOI：
10.1109/ecce-asia49820.2021.9479081
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
S. Finney
中科院分区：
文献类型：
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作者：
P. Judge;Ross Mathieson;S. Finney
提出了一种用于碳化硅(SIC)有源栅驱动器开发的新型高带宽多电平栅极驱动器拓扑结构。该模块化多电平栅极驱动器(MMGD)是一种电压调制栅极驱动器拓扑，具有2.5 ns的分辨率和大约5A的电流源/电流吸收能力，允许驱动高功率的SiCMOSFET。MMGD是由现成的组件组成的，因此很容易复制。栅极驱动器的速度已经被发现足够快，可以有效地脉宽调制大功率SiCMOSFET的栅极，从而允许研究多种栅极驱动策略。给出了1.7KV300A碳化硅MOSFET的实验结果，验证了MMGDS对大功率器件开关行为的积极影响能力。
This paper presents a new high-bandwidth multilevel gate-drive topology for use in Silicon Carbide (SiC) Active Gate-Driver Development. The presented Modular Multilevel gate Driver (MMGD) is a voltage modulated gate-driver topology that has a resolution of 2.5 ns and a current source/sink ability of approximately 5A, allowing for driving of high-power SiC MOSFETS. The MMGD is formed of off-the-shelf components, and so is readily reproducible. The speed of the gate-driver has been found to be fast enough to effectively PWM the gate of a high-power SiC MOSFET, allowing mutliple gate-driving strategies to be investigated. Experimental results using a 1.7 kV 300 A SiC MOSFET are given to validate the MMGDs ability to actively influence the switching behaviour of a high-power device.