Construction of FeN alloy films with ultra-strong magnetism and tunable magnetic anisotropy for spintronic application
Construction of FeN alloy films with ultra-strong magnetism and tunable magnetic anisotropy for spintronic application
复制标题
DOI:
10.1016/j.jallcom.2017.07.127
复制
发表时间:
2017-11
影响因子:
6.2
通讯作者:
C. Feng;J. Yin;J. Niu;Qinghua Zhang;L. Gu;Feng Yang;Xiaolei Tang;Longxiang Xu;Kui Gong-Kui-Gon
中科院分区:
文献类型:
--
作者:
C. Feng;J. Yin;J. Niu;Qinghua Zhang;L. Gu;Feng Yang;Xiaolei Tang;Longxiang Xu;Kui Gong-Kui-Gon
FeN alloy film is a promising spintronic material with the theoretically ultra-strong magnetism (saturation magnetizationMSand magnetic anisotropyKeff) and high spin polarization, which relies on the degree of N ordering interstice occupancy (S). However, due to the high activation energy for N ordering, theSvalue of an actual FeN film is mostly lower than 35% and this restricts the achievable magnetism and transportation property. Thus, the construction of a FeN alloy film with well-controlled magnetism and efficient electronic transportation remains a long-standing challenge. Here, we tackle the problem by strain engineering. Using an Fe/Cr underlayer, we introduced a considerable epitaxial strain in the FeN lattice. The strain is proven to effectively promote theSvalue to over 60%, resulting in remarkable enhancement ofMSvalue from 2.18T to 2.81T (30% increment) and effective tunability ofKeffvalue ranging 1.3∼2.2 × 106J/m3. Besides, the matched energy band symmetry (Δ5) between Cr and Fe16N2facilitates the efficient electronic transportation for spintronic applications. By simulating interstice distribution with the first-principles calculations, the lattice strain is found to decrease the activation energy for N interstitial migration, which serves as a thermodynamic driving force for the magnetism tunability.