Reduced fill factors in multicrystalline silicon solar cells due to injection‐level dependent bulk recombination lifetimes
Reduced fill factors in multicrystalline silicon solar cells due to injection‐level dependent bulk recombination lifetimes
复制标题
由于注入水平相关的体复合寿命导致多晶硅太阳能电池的填充因子降低
DOI：
10.1002/1099-159x(200007/08)8:4
复制
发表时间：
2000
影响因子：
6.7
通讯作者：
A. Cuevas
中科院分区：
文献类型：
--
作者：
D. Macdonald;A. Cuevas
实验测量了多晶硅太阳电池前驱体的复合寿命作为注入能级的函数，并用冲击波-雷-读-霍尔统计方法进行了模拟。然后使用可变寿命的表达式来使用简单的解析方法来预测最终的电池开路电压和填充因数。当精确的复合寿命测量成为可能时，预测的参数与成品电池上的测量值很好地匹配。电池受到体复合的限制，这不仅在较低的寿命内限制了开路电压，而且由于在单太阳最大功率条件下强烈的注入水平依赖而降低了填充因子。结果表明，这种非理想行为不能用结复合来充分解释。数值模拟并讨论了硅中的重要杂质间隙铁对电压和填充因子的具体影响。
Recombination lifetimes of multicrystalline silicon solar cell precursors have been measured experimentally as a function of injection-level, and modeled using Shock-ley-Read-Hall statistics. The expressions for the variable lifetimes are then used to predict the final cell open-circuit voltages and fill factors using a simple analytic method. When accurate recombination lifetimes measurements are possible, the predicted parameters match well with the measured values on finished cells. The cells are shown to be limited by the presence of bulk recombination, which not only limits the open-circuit voltage through lower lifetimes, but also reduces the fill factor due to a strong injection-level dependence around one-sun maximum-power conditions. It is shown that such non-ideal behaviour cannot be adequately explained by junction recombination. The specific effect of interstitial iron, an important impurity in silicon, on voltages and fill factors is modeled numerically and discussed.