InxGa1-xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation
InxGa1-xSe mixed crystals grown from an In flux by the traveling heater method for THz wave generation
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InxGa1-xSe 混合晶体通过移动加热器方法从 In 助熔剂中生长出来，用于产生太赫兹波
DOI：
10.1088/2399-6528/ab983d
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发表时间：
2020
影响因子：
1.2
通讯作者：
Oyama Yutaka
中科院分区：
文献类型：
--
作者：
Sato Yohei;Tang Chao;Watanabe Katsuya;Ohsaki Junya;Yamamoto Takuya;Tanabe Tadao;Oyama Yutaka
以铟为溶剂，提高了溶液中结晶气体的生长速度。用差示扫描量热法(DSC)测定了Se的溶解度和浓度梯度。含Gase的In熔剂饱和生长的晶体中Se的溶解度和溶解温度系数分别是Se在Ga熔剂中溶解时的15倍和2.2倍。在本研究中，我们成功地从In熔剂中生长了In_xGa_1-−_x_Se晶体，而不需要种子晶体，并提高了从溶液中生长GaS的速率。此外，我们还利用差频产生方法在InxGa1−xSe混晶中产生了频率为9.7太赫兹的太赫兹波，并研究了太赫兹辐射输出能量与激发光相互作用长度的关系。厚度为86 0μm的InxGa1 THzxSe混晶对THz波的转换效率(9.7THz)是用Ga溶剂生长的厚度为10 0μm的GaS晶体的2 6倍。
The growth rate of crystalline GaSe from solution was increased by using indium as a solvent. The solubility and concentration gradient of Se were measured using differential scanning calorimetry (DSC). The Se solubility and the temperature coefficient of the solubility were respectively 15 times and 2.2 times greater in crystals grown from an In flux with GaSe at saturation compared with the case of Se dissolved in a Ga flux. In this study, we succeeded in growing In x Ga 1− x Se ingots from an In flux without the need for a seed crystal, and in increasing the growth rate of GaSe from solution. In addition, we used difference frequency generation to generate THz waves (with a frequency of 9.7 THz) in an In x Ga 1− x Se mixed crystal and investigated the relationship between the output energy of the THz radiation and the interaction length of the excitation light. The conversion efficiency of THz wave (9.7 THz) from the In x Ga 1− x Se mixed crystal with thickness of 860 μm was 26 times greater than that of GaSe crystal with thickness 100 μm grown from Ga solvent.