Magnetite Schottky barriers on GaAs substrates
Magnetite Schottky barriers on GaAs substrates
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DOI：
10.1063/1.1925758
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发表时间：
2005-04
期刊：
影响因子：
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通讯作者：
S. Watts;C. Boothman;S. van Dijken;J. Coey
中科院分区：
文献类型：
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作者：
S. Watts;C. Boothman;S. van Dijken;J. Coey
研究了Fe/sub 3/O/sub 4//GaAs（0 0 1）混合结构的界面电输运性质。使用具有不同掺杂水平的p型和n型结构的衬底。整流观察到中等掺杂的基板。确定了中等掺杂的n型结构的肖特基势垒高度为0.55- 0.6eV，而中等掺杂的p型结构的肖特基势垒高度为0.45eV。在高掺杂水平下，衬底的输运特性被发现在室温下是线性的，但在低温下强烈的非线性。得出的结论是，与适当的工程的半导体表面掺杂分布，它是可能的，以隔离不同的传输模式的自旋注入实验。
The electrical transport properties across the interface of hybrid Fe/sub 3/O/sub 4//GaAs(001) structures were investigated in this study. The substrates with p- and n-type structures of different doping levels were used. Rectification was observed for the medium-doped substrates. It was determined that the Schottky barrier height of medium doped n-type structure was 0.55-0.6 eV while that of the medium p-type structure was 0.45 eV. At high doping level, the transport characteristics of the substrates were found to be linear at room temperature but strongly nonlinear at low temperatures. It was concluded that with proper engineering of the semiconductor surface doping profile, it is possible to isolate different transport modes for spin injection experiments.