Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics
Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics
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DOI：
10.1515/nanoph-2022-0584
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发表时间：
2023-01
期刊：
影响因子：
7.5
通讯作者：
Yun-Ran Wang;I. S. Han;M. Hopkinson
中科院分区：
文献类型：
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作者：
Yun-Ran Wang;I. S. Han;M. Hopkinson
摘要外延生长的半导体量子点(QD)和量子环(QR)已被证明是单光子和纠缠光子对的极好来源，使其能够在量子光子学中应用。基于量子点的纳米光子学的新兴领域要求将单个或多个量子点结构确定性地集成到光子体系结构中。然而，自组装量子点的自然不均一性和空间随机性限制了它们的潜力，而在外延过程中可靠地形成均匀有序的量子点仍然是一个挑战。在这里，我们展示了利用分子束外延技术在原位直接激光干涉图案化辅助下制备单个III-V量子点和量子点的规则阵列。介绍了液滴外延(DE)、GaAs/AlGaAs量子点和QRS以及STranski-Krastanov(SK)InAs/GaAs量子点。得到的量子点结构具有很高的均匀性和良好的光学质量，从图案化的∼量子点阵列获得了记录窄的17 meV的光致发光线宽。通过这种新的光学技术制造的QD和QR阵列构成了功能纳米光子器件的下一代平台，并成为未来量子革命的有用构件。
Abstract Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics. The emerging field of QD-based nanophotonics requires the deterministic integration of single or multiple QD structures into photonic architectures. However, the natural inhomogeneity and spatial randomness of self-assembled QDs limit their potential, and the reliable formation of homogeneous and ordered QDs during epitaxy still presents a challenge. Here, we demonstrate the fabrication of regular arrays of single III–V QDs and QRs using molecular beam epitaxy assisted by in situ direct laser interference patterning. Both droplet epitaxy (DE) GaAs/AlGaAs QDs and QRs and Stranski–Krastanov (SK) InAs/GaAs QDs are presented. The resulting QD structures exhibit high uniformity and good optical quality, in which a record-narrow photoluminescence linewidth of ∼17 meV from patterned GaAs QD arrays is achieved. Such QD and QR arrays fabricated through this novel optical technique constitute a next-generation platform for functional nanophotonic devices and act as useful building blocks for the future quantum revolution.