Preparation and Some Properties of Tantalum Carbide
Preparation and Some Properties of Tantalum Carbide
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DOI：
10.1063/1.1728532
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发表时间：
1962
影响因子：
3.2
通讯作者：
B. Eckstein;R. Forman
中科院分区：
文献类型：
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作者：
B. Eckstein;R. Forman
小的碳化钽物体可以通过在温度>2000°K的稀烃气氛中加热由钽制成的物体来制造。在高于2300°K时，通过最初沉积在表面上的碳主要沿沿着晶界扩散到金属中，渗碳相当迅速地进行，以形成Ta 2C薄层，其迅速转化为TaC。后者的抗拉强度为21-25 kg/mm ~ 2，功函数φ=3.17 ev，在2400° ~ 3500°K范围内发射率为0.40-0.46，随温度升高而升高，在1400° ~ 3500°K范围内电阻率ρ=102+0.0178 T（°K）ohm cm。
Small tantalum carbide objects may be made by heating the objects made from tantalum in dilute hydrocarbon atmospheres at temperatures >2000°K. Carburization proceeds quite rapidly above 2300°K by diffusion of carbon initially deposited on the surface into the metal, principally along grain boundaries, to form a thin layer of Ta2C which is quickly converted to the TaC. The latter has a tensile strength of 21–25 kg/mm2, a work function φ=3.17 ev, an emissivity of 0.40–0.46 between 2400° and 3500°K, rising with increasing temperature, and a resistivity ρ=102+0.0178 T (°K) ohm cm between 1400° and 3500°K.