Non-local opto-electrical spin injection and detection in germanium at room temperature
Non-local opto-electrical spin injection and detection in germanium at room temperature
复制标题
室温下锗的非局域光电自旋注入和检测
DOI：
10.1063/1.5003244
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
M. Jamet
中科院分区：
文献类型：
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作者：
F. Rortais;C. Zucchetti;L. Ghirardini;A. Ferrari;C. Vergnaud;J. Widiez;A. Marty;J. Attan'e;H. Jaffrès;J. George;M. Celebrano;G. Isella;F. Ciccacci;M. Finazzi;F. Bottegoni;M. Jamet
非局域载波注入/检测方案是集成系统中信息处理的基础。该范例包括用外部信号控制沟道，其中电荷载流子在“源极”和良好分离的“漏极”之间流动。下一代电子器件除了其电荷之外还可以在载流子的自旋上操作，锗似乎是开发这种平台的最佳宿主材料，因为它与主流硅技术兼容，并且在室温下具有预测的长电子自旋寿命。在这封信中，我们证明了注入纯自旋电流（即，没有相关的电荷传输），结合非本地自旋检测在10 K和室温下。为此，我们使用了横向自旋阀与外延生长的磁性隧道结作为自旋注入器和自旋检测器。非局域磁电阻信号清晰可见，室温下可达15 mΩ。电子光谱仪
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a “source” and a well separated “drain.” The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron sp...