Strongly Modulated Conductivity in Ag/PLZT/LSCO Field-Effect Transistor
Strongly Modulated Conductivity in Ag/PLZT/LSCO Field-Effect Transistor
复制标题
Ag/PLZT/LSCO 场效应晶体管中的强调制电导率
DOI：
10.1080/10584580212361
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
I. Veselovsky
中科院分区：
文献类型：
--
作者：
I. Grekhov;L. Delimova;I. Liniĭchuk;D. Mashovets;I. Veselovsky
以(Pb0.95La0.05)(Zr0.2Ti0.8)O3铁电材料为栅绝缘体的全钙钛矿型场效应管具有对La1.94Sr0.06CuO4和La1.85Sr0.15CuO4沟道电导进行深度(>；70%)调制的可能性。相对较低的载流子密度(∼10 18 m 10 19 cm m 3)、小厚度和相当高的沟道表面质量提供了电场对沟道主要部分的穿透和深电导调制，原则上足以操作具有信息的非破坏性读出的非易失性存储单元。
A possibility of deep (>70%) modulation of La 1.94 Sr 0.06 CuO 4 and La 1.85 Sr 0.15 CuO 4 channel conductance has been shown in all-perovskite field effect transistor with a (Pb 0.95 La 0.05 )(Zr 0.2 Ti 0.8 )O 3 ferroelectric as a gate insulator. Relatively low carrier density (∼10 18 m 10 19 cm m 3 ), small thickness, and rather high surface quality of the channel have provided the penetration of the electric field into the major part of the channel and deep conductance modulation, sufficient, in principle, for operation of a nonvolatile memory cell with a nondestructive readout of information.