Dopant-Stress Synergy in Si Solid-Phase Epitaxy
Dopant-Stress Synergy in Si Solid-Phase Epitaxy
复制标题
硅固相外延中的掺杂剂-应力协同作用
DOI：
10.1063/1.2945291
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发表时间：
2008
影响因子：
4
通讯作者：
R. Gwilliam
中科院分区：
文献类型：
--
作者：
N. Rudawski;K. Jones;R. Gwilliam
研究了B掺杂对应力固相外延Si的影响，B掺杂的B浓度为∼3.0×10 2 0 cm−3，应力为1.0±0.1 GPa.根据电活性杂质促进生长的广义费米能级移动模型，提出施加压应力可以增大本征费米能级和受主能级之间的能量差，从而使掺杂和应力效应在生长动力学中具有协同作用。
The influence of dopants on stressed solid-phase epitaxy of Si was studied in B-doped material up to B concentration of ∼3.0×1020cm−3 and stress of 1.0±0.1GPa. As per the generalized Fermi level shifting model of growth enhancement in the presence of electrically active impurities, it is advanced that application of compressive stress may increase the energy difference between intrinsic Fermi and acceptor levels thus making dopant and stress effects synergistic in growth kinetics.