Solidification temperature of silicon surface layer melted by pulsed laser irradiation
Solidification temperature of silicon surface layer melted by pulsed laser irradiation
复制标题
脉冲激光照射熔化硅表层的凝固温度
DOI：
10.1016/s0169-4332(98)00906-4
复制
发表时间：
1999
影响因子：
6.7
通讯作者：
E. Gatskevich
中科院分区：
文献类型：
--
作者：
G. Ivlev;E. Gatskevich
用高温计测量了激光辐照样品表面（100）、（110）和（111）晶向的Si外延晶化温度。红宝石激光脉冲持续时间为10− 7秒。在有效波长为0.53 μm的绿色光谱范围内检测到熔融硅的热辐射。根据激光诱导液晶相变的非平衡模型对实验数据进行了分析。根据实验结果，在（111）面上外延生长时熔体的过冷度约为35K。（100）和（110）晶面的过冷度相等，比（111）晶面的过冷度低13± 2K。两个动力学制度被认为是。它们的液固界面形态不同，当界面沿α 111 π方向运动时，界面为原子级光滑，而当界面沿α 110 π和α 100 π方向运动时，界面为原子级粗糙。外延结晶的取向依赖性似乎是类似的激光非晶化的Si。
Pyrometric measurements of the epitaxial crystallization temperature of Si have been carried out for the (100), (110) and (111) crystallographic orientations of the laser irradiated surfaces of the samples. A ruby laser pulse duration was 10−7s. Thermal radiation of melted Si was detected in green range of spectrum at the effective wavelength of 0.53 μm. The experimental data obtained have been analyzed on the basis of a nonequilibrium model of laser-induced liquid–crystal phase transitions. According to the experiment, the undercooling of the melt during the epitaxial growth on the (111) plane is about 35 K. The undercooling values corresponding to the (100) and (110) planes are equal and 13±2 K lower than that for the (111) orientation. Two kinetics regimes are considered. They differ in morphology of the liquid–solid interface which is atomically smooth if the interface moves in 〈111〉 direction or is atomically rough for the movement in the 〈110〉 and 〈100〉 directions. The orientation dependence of the epitaxial crystallization seems to be similar to that for the laser amorphization of Si.