Internal potential distribution in organic light emitting diodes measured by dc bridge
Internal potential distribution in organic light emitting diodes measured by dc bridge
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DOI：
10.1063/1.3500837
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发表时间：
2010-10
影响因子：
4
通讯作者：
X. Yin;Y. Le;X. D. Gao;Z. Sun;X. Hou
中科院分区：
文献类型：
--
作者：
X. Yin;Y. Le;X. D. Gao;Z. Sun;X. Hou
有机电致发光器件（OLED）的内部电位分布是一个重要的问题。采用直流电桥消除了器件在低偏压下的高电阻引起的误差，准确地测量了双层和单层OLED的电位分布。发现器件内部的电场不均匀，电势分布随外加偏压的变化而变化。这种现象可能是由于空穴和电子的不均匀注入引起的空间电荷效应，这一点已被阳极功函数修正后的器件结果所证实。
Internal potential distribution of organic light-emitting diodes (OLEDs) is an essential problem. By using dc bridge to eliminate errors due to high resistance of the devices at low bias, the potential distribution has been accurately measured for both double-layer and single-layer OLEDs. It is found that the electric field inside the device is not uniform, and the potential distribution changes with external bias. This phenomenon could be the effect of space charge originating from the unequal injections of holes and electrons, which is confirmed by the results of the device with modified work function of the anode.