Oxide Semiconductor Plasmonics for Infrared Applications
Oxide Semiconductor Plasmonics for Infrared Applications
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DOI：
10.1007/978-3-030-74073-3_4
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
H. Matsui
中科院分区：
文献类型：
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作者：
H. Matsui
本章介绍了在In 2 O3：Sn纳米粒子（ITO NPs）和他们组装的NP膜在红外（IR）范围内的等离子体响应。ITO NP清楚地提供与近IR范围内的局部表面等离子体共振（LSPR）相关的共振峰，其取决于NP中的电子密度。特别地，电子-杂质散射在确定载流子依赖的等离子体激元阻尼中起重要作用，这是基于ITO的等离子体激元材料的设计所需要的。ITO NP的特性主要由光吸收决定。然而，当使用组装的NP膜时，在近红外和中红外范围内观察到高光反射。这种现象是由于这样的事实，即引入表面改性的纳米粒子可以促进产生电场（电场）之间的纳米粒子耦合。三维（3D）E场耦合允许等离子体激元激发共振分裂为四极和偶极模式，从而导致IR范围内的选择性高反射。粒子间的长度和它们所产生的等离子体相互作用可以通过组装的NP膜的高反射性能成功地实现。这项工作提供了重要的见解，利用基于等离子体激元技术的红外光学响应，可应用于红外太阳热屏蔽应用。
This chapter describes plasmonic responses in In2O3: Sn nanoparticles (ITO NPs) and their assembled NP films in the infrared (IR) range. ITO NPs clearly provide resonance peaks related to local surface plasmon resonances (LSPRs) in the near-IR range, which are dependent on electron density in the NPs. In particular, electron–impurity scattering plays an important role in determining carrier-dependent plasmon damping, which is needed for the design of plasmonic materials based on ITO. The characteristics ITO NPs are mainly dominated by light absorption. However, high light reflection is observed in the near- and mid-IR range when using assembled NP films. This phenomenon is due to the fact that the introduction of surface modifications to the NPs can facilitate the production of electric field (E-field) coupling between the NPs. The three-dimensional (3D)E-field coupling allows for resonant splitting of plasmon excitations to the quadrupole and dipole modes, thereby resulting in selective high reflections in the IR range. The interparticle lengths and their derived plasmon interactions can successfully be realized via high reflective performances from the assembled NP films. This work provides important insights for harnessing IR optical responses based on plasmonic technology that can be applied to IR solar thermal shielding applications.