Group IV photonic devices for the mid-infrared
Group IV photonic devices for the mid-infrared
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IV 族中红外光子器件
DOI：
10.1117/12.922814
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
G. Reed
中科院分区：
文献类型：
--
作者：
G. Mashanovich;M. Nedeljkovic;M. Milosevic;Y. Hu;F. Gardes;D. Thomson;T. Masaud;E. Jaberansary;H. Chong;R. Soref;G. Reed
第四族中红外光子学是近年来研究的热点。主要原因是它有许多潜在的应用，从传感到医学，再到自由空间通信和红外对抗。然而，该领域还处于起步阶段，在我们看到类似于近红外硅光子学的进展之前，还有几个严重的挑战需要克服。首先是为中红外找到合适的材料平台。在本文中，我们提出了被动中红外光子器件实现在绝缘体上硅，蓝宝石上硅，和多孔硅上硅的实验结果。我们还提出了在中红外波长范围内的硅和锗的自由载流子诱导的电折射和电吸收的关系。电吸收调制计算从杂质掺杂光谱从文献中，这些光谱的Kramers-Kronig分析被用来预测电折射调制。我们研究了电折射和电吸收的波长依赖性，发现预测表明长波调制器设计在许多情况下将不同于电信范围内使用的调制器。
Group IV mid-infrared photonics is attracting more research interest lately. The main reason is a host of potential applications ranging from sensing, to medicine, to free space communications and infrared countermeasures. The field is, however, in its infancy and there are several serious challenges to be overcome before we see progress similar to that in the near-infrared silicon photonics. The first is to find suitable material platforms for the mid-infrared. In this paper we present experimental results for passive mid-infrared photonic devices realised in silicon-on-insulator, silicon-on-sapphire, and silicon on porous silicon. We also present relationships for the free-carrier induced electro-refraction and electro-absorption in silicon and germanium in the mid-infrared wavelength range. Electro-absorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electro-refraction modulation. We examine the wavelength dependence of electro-refraction and electro-absorption, finding that the predictions suggest longer-wave modulator designs will in many cases be different than those used in the telecom range.