Semiconducting behaviour of RuGa2
Semiconducting behaviour of RuGa2
复制标题
RuGa2 的半导体行为
DOI：
10.1016/0025-5408(84)90068-0
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发表时间：
1984
影响因子：
5.4
通讯作者：
H. Meyer
中科院分区：
文献类型：
--
作者：
J. Evers;G. Oehlinger;H. Meyer
在水冷铜舟中，采用感应加热的方法，在氩气保护下制备了具有TiSi 2型结构的RuGa 2。用四点法测量了一个近似矩形（7 × 5 × 4 mm ~ 3）的多晶样品在20 °C ~ 400 °C温度范围内的电导率。RuGa 2是一种室温电阻率为0.2 ohm · cm，带隙为1.042 eV的半导体材料。半导体性能已定性证明RuAl 2（TiSi 2型结构）和Os 2Si 3（Ru 2Si 3型结构，缺陷TiSi 2结构）。
RuGa2with TiSi2-type structure was prepared by inductively heating ruthenium and gallium in a water-cooled copper boat under argon atmosphere. The electrical conductivity of a polycrystalline sample of nearly rectangular shape (7 × 5 × 4 mm3) was measured in the temperature range from 20 °C to 400 °C by the four-point technique. RuGa2is a semiconductor with an electrical resistivity of 0.2 ohm · cm at room temperature and a bandgap of ∼ 0.42 eV. Semiconducting properties have been qualitatively demonstrated for RuAl2(TiSi2-type structure) and for Os2Si3(Ru2Si3-type structure, defect TiSi2-structure).