Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order
Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order
复制标题
具有鲁棒电荷密度波序的化学气相沉积生长晶圆级二维二硒化钽
DOI:
10.1002/adma.201804616
复制
发表时间:
2018
影响因子:
29.4
通讯作者:
Deng
中科院分区:
文献类型:
--
作者:
Shi Jianping;Zhao Liyun;Hong Min;Huan Yahuan;Zhang Zhepeng;Yang Pengfei;Zhang Qing;Zhang Yanfeng;Shi Jianping;Hong Min;Huan Yahuan;Zhang Zhepeng;Yang Pengfei;Zhang Yanfeng;Shi Jianping;Wang Jian;Shi Jianping;Gu Lin;Wang Jian;Chen Xuexian;Chen Huanjun;Deng
2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge‐density‐wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, the scalable and thickness‐tunable syntheses of such envisioned MTMDCs are still challenging. Meanwhile, the origin of CDW order at the 2D limit is controversial. Herein, the direct synthesis of wafer‐scale uniform monolayer 2H‐TaSe2films and thickness‐tunable flakes on Au foils by chemical vapor deposition is accomplished. Based on the thickness‐tunable 2H‐TaSe2, the robust periodic lattice distortions that relate to CDW orders by low‐temperature transmission electron microscopy are directly visualized. Particularly, a phase diagram of the transition temperature from normal metallic to CDW phases with thickness by variable‐temperature Raman characterizations is established. Intriguingly, dramatically enhanced transition temperature from bulk value ≈90 to ≈125 K is observed from monolayer 2H‐TaSe2, which can be explained by the enhanced electron–phonon coupling mechanism. More importantly, an ultrahigh specific capacitance is also obtained for the as‐grown TaSe2on carbon cloth as supercapacitor electrodes. The results hereby open up novel avenues toward the large‐scale preparation of high‐quality MTMDCs, and shed light on their applications in exploring some fundamental issues.