GROWTH AND CHARACTERIZATION
GROWTH AND CHARACTERIZATION
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DOI：
10.1142/9789812831439_0001
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发表时间：
1995-04
期刊：
影响因子：
--
通讯作者：
K. Fujiwara
中科院分区：
文献类型：
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作者：
K. Fujiwara
半导体超晶格是一类新的半导体材料，其组分以自然界中不存在的方式周期性地排列。在这一章中，我们将描述目前用于研究半导体超晶格的半导体材料及其生长技术。自1970年江崎和大津首次提出人工合成超晶格以来，这种超细半导体（目前称为量子结构）的物理学在过去20年中取得了巨大进展。丁格尔等人2在隔离量子阱异质结构中研究了量子限制的概念，并通过隧穿现象与超晶格密切相关，量子限制的概念导致了量子尺寸效应的观察。因此，这两个概念经常在相同的物理基础上讨论，但每个领域都有自己的阴谋和不同的物理学，适用于许多电子和光学设备。为了制造在原子尺度上被控制的特别定制的半导体结构，必须开发复杂的外延生长技术。这些先进的技术使我们能够制备，例如，半导体超薄异质结构层小到一个单分子层（厚度仅为0.283纳米的GaAs沿着立方[001]方向）。分子束外延（MBE）是迄今为止发展起来的具有代表性的外延方法之一，它是由Cho和亚瑟开创的。3外延是一种薄晶体的生长方法
Semiconductor superlattices can be defined as a new class of semiconductor materials with a periodic arrangment of the constituents in such a way, which does not exist in nature. In this chapter, we will describe the semiconductor materials and their growth technologies which are currently used for the investigation of semiconductor superlattices. Since the first proposal by Esaki and Tsu¹ of synthetic artificial superlattices in 1970, great advances in the physics of such ultra-fine semiconductors, presently called quantum structures, have been made within the past two decades. The concept of quantum confinement, which has led to the observation of quantum size effects, was studied by Dingle et al. 2 in isolated quantum well heterostructures and is closely related to superlattices through the tunneling phenomena. Therefore, these two ideas are often discussed on the same physical basis, but each field has its own intrigue and different physics useful for applications in many electronic and optical devices. To fabricate the specially tailored semiconductor structures which are being controlled on an atomic scale, sophisticated epitaxial growth technologies had to be developed. These advanced technologies allow us to prepare, for example, semiconductor ultra-thin heterostructure layers as small as one mono-molecular layer (the thickness is only 0.283 nm in GaAs along a cubic [001] direction). One of the representative epitaxial methods so far developed is molecular beam epitaxy (MBE), which was pioneered by Cho and Arthur. 3 Epitaxy stands for a growth method of thin crystal