Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
Growth of Zn3Ta2O8 crystal scintillator by a novel melt growth technique named shielded arc melting method
复制标题
采用新型熔体生长技术（保护电弧熔化法）生长 Zn3Ta2O8 晶体闪烁体
DOI：
10.1016/j.omx.2022.100149
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发表时间：
2022
影响因子：
--
通讯作者：
Yoshikawa Akira
中科院分区：
文献类型：
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作者：
Yajima Ryuga;Kamada Kei;Takizawa Yui;Yoshino Masao;Murakami Rikito;Kim Kyoung Jin;Horiai Takahiko;Yamaji Akihiro;Kurosawa Shunsuke;Yokota Yuui;Sato Hiroki;Toyoda Satoshi;Ohashi Yuji;Hanada Takashi;Yoshikawa Akira
本文研究了用电弧熔炼法在熔体中生长高蒸气压氧化锌Zn_3Ta_2O_8晶体。评价了晶体的辐射响应特性。生长的晶体在410 nm处显示出发射峰，归因于自陷激发Ta 4 +-O2−。X射线摇摆曲线的半峰全宽为655弧秒。Zn 3 Ta 2 O 8在662 keV γ射线照射下的光输出约为4，700光子/MeV。衰减时间为17.3 μs？因此，屏蔽电弧熔化法被证明是一种快速和经济的增长技术，用于调查含有高蒸汽压起始成分的新闪烁体材料。
In this study, it was demonstrated that Zn3Ta2O8crystals containing zinc oxide with high vapor pressure can grow in melt by the shielded arc melting method. The radiation response characteristics of the crystals were evaluated. The grown crystals showed an emission peak at 410 nm, ascribed to self-trapped excitation, Ta4+–O2−. The full width at half maximum of the X-ray rocking curve was 655 arcsec. The light output under 662 keV gamma-ray irradiation of Zn3Ta2O8was approximately 4,700 photons/MeV. The decay time was 17.3 μs? Thus, the shielded arc melting method was shown to be a quick and economic growth technique for the survey of new scintillator materials containing high-vapor-pressure starting components.