Quantitative analysis by submicron secondary ion mass spectrometry
Quantitative analysis by submicron secondary ion mass spectrometry
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亚微米二次离子质谱定量分析
DOI：
10.1116/1.584322
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发表时间：
1988
影响因子：
1.4
通讯作者：
Y. Nihei
中科院分区：
文献类型：
--
作者：
Hitomi Satoh;M. Owari;Y. Nihei
为了将二次离子质谱法（SIMS）应用于亚微米区域的定量分析，我们将聚焦金属离子束、平面聚焦质谱仪和多通道平行检测系统相结合，制成了高空间分辨率的二次离子质谱法（亚微米SIMS）。采用直径<0.1 μm的35 kV、100 pA波束。在测量过程中，当缓慢光栅化时，这种高电流密度离子束会以很大的溅射速率破坏样品。这引起二次离子的绝对强度和相对强度的迅速变化。在我们的系统中，120通道平行探测器覆盖了m/e色散的1:2质量范围。利用该亚微米SIMS，研究了影响表面微观结构分析的定量因素。溅射率和二次离子强度在很大程度上取决于在光束照射下主光束与样品表面之间的夹角；这种地形效应扭曲了定量结果。为了……
In order to apply secondary ion mass spectrometry (SIMS) to quantitative analysis of submicron areas, we made a high‐spatial resolution SIMS (submicron SIMS) by combining a focused metal ion beam, a plane‐focusing mass spectrometer, and a multichannel parallel detection system. A 35 kV, 100 pA beam with diameter on the sample of <0.1 μm was used. During measurements, this high‐current density ion beam can destroy the sample with a large sputtering rate when slowly rastered. This causes rapid changes in both absolute and relative intensities of secondary ions. In our system, a 120‐channel parallel detector covers the 1:2 mass range of m/e dispersion. By using this submicron SIMS, quantitative factors in the analysis of microstructures on the surface were investigated. Sputtering yield and, consequently, secondary ion intensity depend largely upon the angle between the primary beam and the sample surface just under the beam irradiation; such topographic effects distort the quantitative results. In order to ...