Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation
Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation
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DOI：
10.1088/2058-6272/abea71
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发表时间：
2021-04
影响因子：
1.7
通讯作者：
Quan 权 SHI 石;S. Kajita;S. DAI 戴;Shuangyuan 双园 FENG 冯;N. Ohno
中科院分区：
文献类型：
--
作者：
Quan 权 SHI 石;S. Kajita;S. DAI 戴;Shuangyuan 双园 FENG 冯;N. Ohno
通过实验和模拟研究了氦等离子体辐照硅表面纳米锥结构的形成机理。在我们之前的研究中，发现杂质（钼）作为屏蔽物聚集在Si上是形成高密度纳米锥的关键因素。在这里具体这一理论，已开发的模拟工作与SURO代码的基础上，通过使用电子色散X射线光谱的纳米锥的杂质浓度测量。介绍了纳米锥的形成过程。在倾斜离子入射方向下的模拟结构与实验结果吻合较好。此外，再沉积效应被提出作为另一个重要的过程的纳米锥形成的基础上，从锥直径和溅射产率的比较结果之间的情况下，没有再沉积效应。
The formation mechanism of nanocone structure on silicon (Si) surface irradiated by helium plasma has been investigated by experiments and simulations. Impurity (molybdenum) aggregated as shields on Si was found to be a key factor to form a high density of nanocone in our previous study. Here to concrete this theory, a simulation work has been developed with SURO code based on the impurity concentration measurement of the nanocones by using electron dispersive x-ray spectroscopy. The formation process of the nanocone from a flat surface was presented. The modeling structure under an inclining ion incident direction was in good agreement with the experimental result. Moreover, the redeposition effect was proposed as another important process of nanocone formation based on results from the comparison of the cone diameter and sputtering yield between cases with and without the redeposition effect.