Manganese Doping of Monolayer MoS2: The Substrate Is Critical.
Manganese Doping of Monolayer MoS2: The Substrate Is Critical.
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DOI：
10.1021/acs.nanolett.5b02315
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发表时间：
2015-09
期刊：
影响因子：
10.8
通讯作者：
Kehao Zhang;S. Feng;Junjie Wang;A. Azcatl;N. Lu;R. Addou;Nan Wang;Chanjing Zhou;J. Lerach-J.-Lerac
中科院分区：
文献类型：
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作者：
Kehao Zhang;S. Feng;Junjie Wang;A. Azcatl;N. Lu;R. Addou;Nan Wang;Chanjing Zhou;J. Lerach-J.-Lerac
过渡金属二硫属化物（TMD）的替代掺杂可以提供在这些材料中实现可调谐p-n结、带隙、化学敏感性和磁性的途径。在这项研究中，我们证明了原位掺杂单层二硫化钼（MoS 2）与锰（Mn）通过气相沉积技术。Mn在MoS 2中的成功掺入导致能带结构的修改，如通过光致发光和X射线光电子能谱所证明的，但这在很大程度上取决于衬底的选择。我们表明，惰性基材（即，石墨烯）允许在MoS 2中掺入几个百分比的Mn，而具有反应性表面末端的衬底（即，SiO2和蓝宝石）阻止Mn的掺入，并且仅仅导致缺陷MoS 2。这里提出的结果表明，定制的衬底表面可能是最重要的因素，在替代掺杂的TMD与非TMD元素。
Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.