Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory
Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory
复制标题
超低压八晶体管隧道FET静态随机存储器静态噪声容限封闭解析模型
DOI：
10.7567/jjap.55.04ed06
复制
发表时间：
2016
影响因子：
1.5
通讯作者：
T. Matsukawa
中科院分区：
文献类型：
--
作者：
H. Fuketa;S. O'Uchi;K. Fukuda;T. Mori;Y. Morita;M. Masahara;T. Matsukawa
讨论了八管隧道场效应晶体管（TFET）静态随机存取存储器（SRAM）单元在0.3V超低电源电压（VDD）下的变化。提出了TFET SRAM单元静态噪声容限（SNM）的封闭解析模型，阐明了SNM对器件参数的依赖关系，并通过仿真进行了验证。使用所提出的模型的SNM的变化所造成的工艺变化进行了研究，我们显示了TFET SRAM设计中的阈值电压（VTH）的变化，这表明，VTH的变化必须减少作为亚阈值摆幅变得陡峭的要求。此外，TFET SRAM单元工作在VDD = 0.3 V，在两种不同的工艺技术的可行性进行了评估，使用所提出的模型。
Variations of eight-transistor (8T) tunnel FET (TFET) static random access memory (SRAM) cells at ultra-low supply voltage (VDD) of 0.3 V are discussed. A closed-form analytical model for the static noise margin (SNM) of the TFET SRAM cells is proposed to clarify the dependence of SNM on device parameters and is verified by simulations. The SNM variations caused by process variations are investigated using the proposed model, and we show a requirement for the threshold voltage (VTH) variation in the TFET SRAM design, which indicates that the VTH variation must be reduced as the subthreshold swing becomes steeper. In addition, a feasibility of the TFET SRAM cells operating at VDD = 0.3 V in two different process technologies is evaluated using the proposed model.