Mechanism of current leakage through metal/n-GaN interfaces
Mechanism of current leakage through metal/n-GaN interfaces
复制标题
DOI：
10.1016/s0169-4332(01)00902-3
复制
发表时间：
2002-05
影响因子：
6.7
通讯作者：
Susumu Oyama;T. Hashizume;H. Hasegawa
中科院分区：
文献类型：
--
作者：
Susumu Oyama;T. Hashizume;H. Hasegawa
详细的电流-电压-温度（I-V-T）的测量上制作的肖特基二极管MOVPE生长的n-GaN层。在反向I-V曲线中观察到与电子发射（TE）输运的较大偏离，并具有较大的过量泄漏。基于场致发射（TFE）模型的计算发现，即使掺杂密度低至1× 1017 cm −3，隧穿也在载流子穿过GaN肖特基势垒的输运中起着重要作用。提出了一种基于近表面固定电荷或表面态存在的势垒修正的TFE模型来解释所观察到的大反向漏电流。
Detailed current–voltage–temperature (I–V–T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I–V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1×1017cm−3. A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.