Even-denominator fractional quantum Hall states at an isospin transition in monolayer graphene
Even-denominator fractional quantum Hall states at an isospin transition in monolayer graphene
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DOI:
10.1038/s41567-018-0190-0
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发表时间:
2018-09-01
期刊:
影响因子:
19.6
通讯作者:
Young, A. F.
中科院分区:
文献类型:
--
作者:
Zibrov, A. A.;Spanton, E. M.;Young, A. F.
In monolayer graphene, the two inequivalent sublattices of carbon atoms combine with the electron spin to give electrons a nearly fourfold degenerate internal isospin. At high magnetic fields, the isospin degeneracy increases the already large intrinsic degeneracy of the two-dimensional Landau levels, making low-disorder graphene systems a versatile platform for studying multicomponent quantum magnetism. Here, we describe magnetocapacitance experiments of ultraclean monolayer graphene devices in which a hexagonal boron nitride substrate breaks the symmetry between carbon sublattices. We observe a phase transition in the isospin system, which is marked by unusual transitions in odd-denominator fractional quantum Hall states for filling factors nu near charge neutrality and by the unexpected appearance of incompressible even-denominator fractional quantum Hall states at nu = +/- 1/2 and nu = +/- 1/4. We propose a scenario in which the observed states are multicomponent fractional quantum Hall states incorporating correlations between electrons on different carbon sublattices, associated with a quantum Hall analogue of the Neel-to-valence bond solid transition that occurs at charge neutrality.