Low-temperature in situ large-strain plasticity of silicon nanowires
Low-temperature in situ large-strain plasticity of silicon nanowires
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DOI：
10.1002/adma.200602705
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发表时间：
2007-08-17
影响因子：
29.4
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Han, Xiaodong;Zheng, Kun;Wang, Zhong Lin
报道了在超高分辨电子显微镜上进行的轴向拉伸实验，在室温下原位观察到了单晶硅纳米线的大应变塑性。LSP被证明导致断裂前NW直径减小四倍(见图)，比体硅高三个数量级。
The large-strain plasticity (LSP) of single-crystalline silicon nanowires (Si NWs) observed in situ at room temperature by axial tension experiments carried out in an ultrahigh-resolution electron microscope is reported. The LSP is demonstrated to result in a fourfold reduction in NW diameter before fracture (see figure), which is three orders of magnitude higher than that of bulk Si.