Characterization of SiC Schottky diodes at different temperatures
Characterization of SiC Schottky diodes at different temperatures
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DOI：
10.1109/lpel.2003.821026
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
B. Ozpineci;L. Tolbert
中科院分区：
文献类型：
--
作者：
B. Ozpineci;L. Tolbert
碳化硅（SiC）基功率半导体开关的出现，与硅（Si）基开关相比具有更优越的特性，使得电力电子转换器系统的性能得到了大幅提高。这些采用SiC功率器件的系统具有更紧凑、更轻、更高效的品质；因此，它们非常适合高压电力电子应用。在这项研究中，对商用 Si pn 和 SiC 肖特基二极管进行了测试和表征，得出了它们在不同温度下的行为静态和损耗模型，并对它们进行了相互比较。
The emergence of silicon carbide (SiC) based power semiconductor switches, with their superior features compared with silicon (Si) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other.