Aligned growth of ZnO nanowires by NAPLD and their optical characterizations
Aligned growth of ZnO nanowires by NAPLD and their optical characterizations
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NAPLD 定向生长 ZnO 纳米线及其光学表征
DOI：
10.1016/j.apsusc.2009.04.049
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发表时间：
2009-09-30
影响因子：
6.7
通讯作者：
Okada, Tatsuo
中科院分区：
文献类型：
--
作者：
Guo, Ruiqian;Matsumoto, Masato;Okada, Tatsuo
采用无催化剂的纳米粒子辅助脉冲激光烧蚀沉积（NAPLD）技术，在退火后的（0 0 0 1）c切和（1 1 2 0）a切蓝宝石衬底上分别成功地生长了垂直取向和水平取向的ZnO纳米线。所合成的ZnO纳米线在室温下具有390 nm左右的紫外发射和不存在的绿色发射。通过介电泳（DEP）将单根ZnO纳米线收集在电极间隙中。在光抽运下，单根ZnO纳米线在390 nm附近有几个尖锐的紫外发射峰，其能量间隔几乎是恒定的，这与多根纳米线薄膜的宽紫外发射有很大不同，表明ZnO纳米线是激光介质的候选者。单根ZnO纳米线显示出偏振光致发光（PL）。所合成的ZnO纳米线在短波长发光二极管、激光二极管和气体传感器等方面有着广泛的应用前景。(C)2009爱思唯尔有限公司版权所有。
Not only vertically aligned ZnO nanowires but also horizontally aligned ZnO nanowires have been successfully grown on the annealed (0 0 0 1) c-cut and (1 1 2 0) a-cut sapphire substrates, respectively using catalyst-free nanoparticle-assisted pulsed-laser ablation deposition (NAPLD). The as-synthesized ZnO nanowires exhibit an ultraviolet emission at around 390 nm and the absent green emission under room temperature. The single ZnO nanowire was collected in the electrode gap by dielectrophoresis (DEP). Under the optical pumping, the single ZnO nanowire exhibited UV emission at around 390 nm with several sharp peaks whose energy spacings are almost constant, which greatly differs from the broad UV emission of the film with many nanowires, suggesting ZnO nanowires as candidates for laser media. The single ZnO nanowire showed polarized photoluminescence (PL). The as-synthesized ZnO nanowires could find many interesting applications in short-wavelength light-emitting diode (LED), laser diode and gas sensor. (C) 2009 Elsevier B.V. All rights reserved.