Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets
Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets
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DOI：
10.1103/physrevlett.108.266806
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发表时间：
2012-06-29
影响因子：
8.6
通讯作者：
Zhang, Chao
中科院分区：
文献类型：
--
作者：
Wang, Xiaolin;Du, Yi;Zhang, Chao
拓扑绝缘体是一类具有体绝缘态和无间隙金属表面态的新型凝聚态物质，已表现出令人着迷的量子效应。然而，拓扑绝缘体的潜在实际应用仍在全球范围内探索。我们证明了五倍厚的 Bi2Te3 拓扑绝缘体纳米片显示出巨磁阻和线性磁阻。在室温下实现的巨磁阻和线性磁阻高达600%以上，并且在较高温度下有进一步增加的趋势，并且与温度的关系较弱且与场呈线性关系，在高达13 T的测量场中没有任何饱和迹象。此外，我们观察到磁场感应间隙低于10 K。对巨磁阻和线性磁阻的观察为3D拓扑绝缘体在磁电传感器（例如磁盘）的实际应用中铺平了道路。读数头、机电一体化和其他多功能电磁应用。
Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi2Te3 topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.