Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition
Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition
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金属有机化学气相沉积法生长的Ga2O3的电学、介电和光学特性
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
P. Terziyska
中科院分区：
文献类型：
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作者：
A. Paskaleva;D. Spassov;P. Terziyska
利用工业相关金属有机化学气相沉积(MOCVD)技术在p型硅上生长了15-130 nm的氧化镓薄膜，以检验新发现的宽带隙材料与硅技术集成的可能性。对其电学、介电和光学性能进行了研究和分析。为了进行电学表征，将Ga2O_3薄膜集成到Al/Ga2O_3/p-Si金属氧化物半导体(MOS)电容器中。通过C-V测量得到了薄膜的相对介电常数、平带电压漂移和氧化物有效电荷密度。椭圆偏振光谱测量表明，用MOCVD方法沉积的Ga2O_3是一种直接带隙材料，其光学带隙约为5.1 eV。椭偏仪和电学结果都表明形成了较厚的界面SiO_2。
Thin film (15-130 nm) of gallium oxide were grown by the industry relevant metal organic chemical vapour deposition (MOCVD) technique on p-type Si to check the possibility for integration of newly rediscovered wide bandgap material with the Si technology. Electric, dielectric and optical properties were studied and analyzed. To perform electrical characterization, Ga2O3 films were integrated into Al/Ga2O3/p-Si metal–oxide–semiconductor (MOS) capacitors. Relative dielectric permittivity, flat-band voltage shift and effective oxide charge density were obtained from C-V measurements. Spectroscopic ellipsometry measurements reveal that Ga2O3 deposited by MOCVD is a direct bandgap material with a large optical bandgap of about 5.1 eV. Both ellipsometrical and electrical results show formation of a thick interfacial SiO2.