Effect of radical fluorination on mono- and bi-layer graphene in Ar/F2 plasma
Effect of radical fluorination on mono- and bi-layer graphene in Ar/F2 plasma
复制标题
DOI：
10.1063/1.4760268
复制
发表时间：
2012-10
影响因子：
4
通讯作者：
K. Tahara;T. Iwasaki;A. Matsutani;M. Hatano
中科院分区：
文献类型：
--
作者：
K. Tahara;T. Iwasaki;A. Matsutani;M. Hatano
氟化石墨烯具有在石墨烯中实现独特性质和功能的可能性。我们提出了一种高度控制的放电方法，利用Ar/F2等离子体中的氟自由基。为了抑制离子轰击并改善与石墨烯上的氟自由基的反应，将基底“面朝下”放置在等离子体室中。虽然单层石墨烯比双层石墨烯具有更高的反应活性，但双层石墨烯的拉曼光谱在532 nm激发下的拉曼D峰强度达到ID/IG ≥ 0.5的水平。退火氟化样品证明了单层和双层石墨烯的自由基氧化的可逆性。X射线光电子能谱表明碳氟键的存在。
Fluorinated graphene has the possibility to achieve unique properties and functions in graphene. We propose a highly controlled fluorination method utilizing fluorine radicals in Ar/F2 plasma. To suppress ion bombardments and improve the reaction with fluorine radicals on graphene, the substrate was placed “face down” in the plasma chamber. Although monolayer graphene was more reactive than bilayer, fluorination of bilayer reached the level of ID/IG ∼ 0.5 in Raman D peak intensity at 532 nm excitation. Annealing fluorinated samples proved reversibility of radical fluorination for both mono- and bi-layer graphenes. X-ray photoelectron spectroscopy showed the existence of carbon-fluorine bonding.