Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid
Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid
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通信——路易斯酸性氯铝酸盐离子液体中硅上光诱导镀铝
DOI：
10.1149/2.0731809jes
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发表时间：
2018
影响因子：
3.9
通讯作者：
Dihua Wang
中科院分区：
文献类型：
--
作者：
Laidong Wang;Wen;W. Shin;M. Tao;Bowen Deng;Dihua Wang
常规的铝在硅上的电镀通常需要种子层来克服衬底的高电阻率。本文报道了在离子液体中在硅衬底上直接光诱导镀铝的研究。在没有任何晶种层的情况下，沉积的铝对硅表面具有良好的粘附性。铝沉积物的电阻率低至4 × 10−6 Ω-cm，仅为块状铝的1.5倍左右。光源的合适波长为600 nm至1，000 nm。分析了电镀温度对铝镀层形貌的影响。
Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10−6 Ω-cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed.