Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
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DOI：
10.1063/1.5080959
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发表时间：
2019-02-25
影响因子：
4
通讯作者：
Pop, Eric
中科院分区：
文献类型：
--
作者：
Neumann, Christopher M.;Okabe, Kye L.;Pop, Eric
相变存储器（PCM）是一种新兴的数据存储技术；然而，它的编程本质上是热的，通常不节能。本文采用丝状接触和热约束相结合的方法来降低PCM的开关功率。通过底部电极上的氧化TiN层形成丝状接触，并使用三原子厚的MoS2单层半导体界面实现热约束。前者减少了相变材料的开关体积，与典型的150nm直径的蘑菇电池相比，复位电流减少了70%。超薄（类似于6A度）MoS2实现了增强的热约束，使开关电流和功率额外降低了30%。我们还使用详细的模拟来表明，进一步定制这种PCM电池的电和热界面，使其接近其基本极限，可能会导致功率效率提高六倍。由AIP出版社授权出版。
Phase change memory (PCM) is an emerging data storage technology; however, its programming is thermal in nature and typically not energy-efficient. Here, we reduce the switching power of PCM through the combined approaches of filamentary contacts and thermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using a monolayer semiconductor interface, three-atom thick MoS2. The former reduces the switching volume of the phase change material and yields a 70% reduction in reset current versus typical 150 nm diameter mushroom cells. The enhanced thermal confinement achieved with the ultra-thin (similar to 6A degrees) MoS2 yields an additional 30% reduction in switching current and power. We also use detailed simulations to show that further tailoring the electrical and thermal interfaces of such PCM cells toward their fundamental limits could lead up to a sixfold benefit in power efficiency. Published under license by AIP Publishing.