Single shot and burst repetitive operation of thyristors for electric launch applications

Single shot and burst repetitive operation of thyristors for electric launch applications
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DOI:
10.1109/20.911860
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发表时间:
2001
影响因子:
2.1
通讯作者:
T. Podlesak;F. Simon;S. Schneider
T. Podlesak;F. Simon;S. Schneider
中科院分区:
工程技术4区
文献类型:
--
作者:
T. Podlesak;F. Simon;S. Schneider

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电子枪应用要求开关同时具有高峰电流、di/dt和动作能力。由Silicon Power Corporation(SPCO)开发的125 mm直径对称晶闸管(其利用独特的紧凑封装,从结到散热器的热阻减小)解决了热阻问题和传导面积限制。由俄罗斯Ioffe研究所开发的非对称晶闸管--晶闸管开关三极管(RSD),通过在阳极和大电流驱动器中使用独特的高度叉指型栅极结构,解决了换向功率耗散问题。通过将低阻抗脉冲形成网络(21 mF或17 mF总电容)经由受试器械放电到匹配负载或短路中,对两种类型的器械进行测试。测试峰值电流从151 kA变化到221 kA。在与125 mm晶闸管相同的测试电路中,在80 mm直径的RSD上进行测试。该文件的角度来看,这些设备的整体性能和未来的设计和应用的影响。这项工作的含义是,结合这两种类型的设备的设计原则,以解决热敏电阻的热限制,可以增加一个2.5 kV 125 mm对称晶闸管的峰值电流能力的一个因素大于2和di/dt的数量级。具体地,晶闸管应在重复条件下可靠地切换到短路负载中,具有400 kA的峰值电流和25 kA//spl mu/s的di/dt的0.5 ms持续时间脉冲。
Electric gun applications require switches with simultaneous high peak currents, di/dt, and action capability. The development by Silicon Power Corporation (SPCO) of a 125 mm diameter symmetric thyristor which utilizes a unique compact package with decreased thermal resistance from junction to sink has addressed the thermal resistance problem and conduction area limitations. The development of the reversely switched dynistor (RSD), an asymmetric thyristor, by the Ioffe Institute in Russia, has addressed the commutation power dissipation problem by using a unique and highly interdigitated gate structure in the anode and a high current driver. Tests were conducted on both types of devices by discharging a low impedance pulse forming network (21 mF or 17 mF total capacitance) via the device under test into either a matched load or a short. Test peak current varied from 151 kA to 221 kA. Testing was performed, in the same test circuit as the 125 mm thyristor, on an 80 mm diameter RSD. The paper places in perspective the overall performance of these devices and the implications for future designs and applications. The implication of this work is that combining the design principles of both types of devices to the solution of the thermal limitations of thyristors could increase the peak current capability of a 2.5 kV 125 mm symmetric thyristor by a factor greater than 2 and the di/dt by an order of magnitude. Specifically, the thyristor should reliably switch, into a shorted load under repetitive conditions, a 0.5 ms duration pulse with a peak current of 400 kA and a di/dt of 25 kA//spl mu/s.