Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy
Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy
复制标题
通过有机金属气相外延在 GaP (001) 上生长纳米级 InAs 岛
DOI：
10.1016/s0169-4332(98)00144-5
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发表时间：
1998
影响因子：
6.7
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
Y. Nonogaki;T. Iguchi;S. Fuchi;Y. Fujiwara;Y. Takeda
我们采用低压有机金属气相外延（LP-OMVPE）方法在GaP（001）衬底上成功地生长了InAs纳米岛。利用非原位原子力显微镜（AFM）和高能电子衍射（HEED）研究了衬底温度和InAs沉积速率对InAs岛形状、尺寸和面密度的影响。原子力显微镜观察表明，随着衬底温度的升高，岛的尺寸减小，而面密度增加，表明迁移在岛的形成中起作用。HEED图案提供了显著的结果，即在高温（650°C）下生长的岛由少量晶粒组成，而在低温（550和500°C）下生长的岛是单晶。
We have successfully grown nanometer-scale InAs islands on GaP (001) by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Effects of substrate temperature and InAs deposition rate on the shape, size and areal density of InAs islands were investigated by ex-situ atomic force microscope (AFM) and high-energy electron diffraction (HEED). The AFM observations showed that the island size decreased with the substrate temperature while the areal density increased, indicating that migration play a role on island formation. The HEED patterns provided significant result that the island grown at high temperature (650°C) consisted of a few grains, while the island grown at low temperatures (550 and 500°C) was single crystalline.