Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices
Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices
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用于高温加工柔性光电器件的白云母上透明氧化铟锡电极
DOI：
10.1021/acsami.6b09166
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发表时间：
2016-10-26
影响因子：
9.5
通讯作者：
Huang, Haitao
中科院分区：
文献类型：
--
作者：
Ke, Shanming;Chen, Chang;Huang, Haitao
在透明柔性白云母上制备了Sn掺杂的In 2 O3（ITO）电极。云母基板的使用使得高温退火工艺（高达500摄氏度）成为可能。由于云母独特的层状结构，ITO/云母即使在连续弯曲1000次后仍保持其低电阻率。当用作透明柔性加热器时，ITO/云母显示出极快的斜坡（
Sn-doped In2O3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 degrees C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (