High-Q/V Photonic Crystal Cavities and QED Analysis in 3C-SiC
High-Q/V Photonic Crystal Cavities and QED Analysis in 3C-SiC
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DOI：
10.1021/acsphotonics.8b01671
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发表时间：
2018-12
期刊：
影响因子：
7
通讯作者：
I. Chatzopoulos;F. Martini;R. Cernansky;A. Politi
中科院分区：
文献类型：
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作者：
I. Chatzopoulos;F. Martini;R. Cernansky;A. Politi
固态量子发射器是量子技术中单光子产生最有希望的候选者之一。然而，它们受到退相干效应的影响，限制了它们的效率和不可区分性。例如，大多数色心的零声子线 (ZPL) 中发射的辐射约为百分之几（例如钻石中的 $NV^-$ 中心，SiC 中的 $V_{Si}V_{C}$），限制了单光子的发射率和效率。与此同时，以集成方式可靠地与光子连接仍然是金刚石和碳化硅技术面临的挑战。在这里，我们在 3C SiC 中开发 Q 因子约为 7,100 的光子晶体腔。我们讨论了这种高限制腔如何显着提高 ZPL 中发射的光子比例并改善其特性。特别是，效率的提高和不可区分性的提高可以为固态量子技术开辟道路。
Solid state quantum emitters are between the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects which limit their efficiency and indistinguishability. For instance, the radiation emitted in the zero phonon line (ZPL) of most color centers is on the order of a few percent (e.g. $NV^-$ centers in Diamond, $V_{Si}V_{C}$ in SiC) limiting the emission rate of single photons as well as the efficiency. At the same time, reliable interfacing with photons in an integrated manner still remains a challenge on both diamond and SiC technology. Here we develop photonic crystal cavities with Q factors in the order of 7,100 in 3C SiC. We discuss how this high confinement cavity can significantly enhance the fraction of photons emitted in the ZPL and improve their characteristics. In particular, the increased efficiency and improved indistinguishability can open the way to quantum technologies in the solid state.