Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures
Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures
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低温热处理硅片位错的动态特性
DOI：
10.1134/1.1340185
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
V. Y. Reznik
中科院分区：
文献类型：
--
作者：
M. Mezhennyi;M. G. Mil’vidskiĭ;V. Pavlov;V. Y. Reznik
研究了无位错硅片(用提拉法生长的单晶)在450℃和650℃热处理时位错运动的特点。结果表明，氧含量为(7-8)×10~(17)cm·−~3的硅片经低温处理后，对硅片在四点弯曲过程中产生的位错的动力学性质有很大影响，并使位错运动的起始应力增加。在热处理晶片弯曲时的压痕位错的产生和扩展中，观察到了一种特征的空间不均匀性。文中还讨论了这些规律出现的原因。
The specific features of the dislocation motion in dislocation-free silicon wafers (single crystals are grown by the Czochralski method) heat-treated at 450 and 650°C have been investigated. It is found that the low-temperature treatment of silicon wafers with an oxygen content of (7–8)×1017cm−3substantially affects the dynamic properties of dislocations generated into silicon wafers during their four-point bending and brings about an increase in the starting stresses of the onset of the dislocation motion. A characteristic spatial inhomogeneity is observed in the generation and propagation of dislocations from indentations upon the bending of heat-treated wafers. The reasons for the regularities revealed are discussed.