Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance
Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance
复制标题
非辐射载流子损耗对脉冲和连续 VECSEL 性能的影响
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
J. Moloney
中科院分区：
文献类型：
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作者：
A. Laurain;J. Hader;Y. Lai;Tsuei;M. Yarborough;G. Balakrishnan;T. Rotter;P. Ahirwar;J. Moloney
我们从实验和理论上研究了脉冲和连续泵浦条件下非辐射载流子损耗对 VECSEL 性能的影响。这些损耗对 VECSEL 性能不利，不仅因为它们降低了泵浦功率到输出功率的转换效率并导致阈值增加，而且还因为它们是强热源。这种加热会降低可实现的输出功率，并最终导致由于热翻转而关闭。我们研究了 1010nm-1040nm 范围内基于 InGaAs 的 VECSEL 以及运行在 2μm 左右的基于 InGaSb 的器件中非辐射损耗的两个主要来源，即缺陷复合和俄歇损耗。虽然在基于 InGaAs 的器件中发现与缺陷相关的损耗相当微不足道，但它们可能严重到足以阻止基于 InGaSb 的结构的 CW 操作。俄歇损失对于两种波长范围都非常重要，并且讨论了结构修改如何抑制它们。对于脉冲操作，记录了输出功率，并研究了脉冲持续时间和形状的影响。
We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce the pump-power to output-power conversion efficiency and lead to increased thresholds, but also because they are strong sources of heat. This heating reduces the achievable output power and eventually leads to shut-off due to thermal roll-over. We investigate the two main sources of non-radiative losses, defect recombination and Auger losses in InGaAs-based VECSELs for the 1010nm-1040nm range as well as for InGaSb-based devices for operation around 2μm. While defect related losses are found to be rather insignificant in InGaAs-based devices, they can be severe enough to prevent CW operation for the InGaSb-based structures. Auger losses are shown to be very significant for both wavelengths regimes and it is discussed how structural modifications can suppress them. For pulsed operation record output powers are demonstrated and the influence of the pulse duration and shape is studied.