High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers
High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers
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具有非对称异质结构层的高性能1.06μm InGaAs/GaAs双量子阱半导体激光器
DOI：
10.1088/1361-6641/ab110b
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发表时间：
2019-05-01
影响因子：
1.9
通讯作者：
Liu, Chongyang
中科院分区：
文献类型：
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作者：
Qiao, Zhongliang;Li, Xiang;Liu, Chongyang
高性能 1.06-μm InGaAs/GaAs 双量子阱 (DQW) 不对称异质结构半导体激光器已被设计、制造和表征。该激光器结构采用金属有机化学气相沉积（MOCVD）技术生长，主要由成分梯度的p-AlxGa1-xAs上熔覆层、p-AlxGa1-xAs上波导层、1.06μm InGaAs/GaAs DQW有源区、未掺杂的In1-xGaxAsyP1-y下波导层和成分梯度n掺杂的In1-xGaxAsyP1-y组成。较低的熔覆层。接触脊宽为 25 μm、不同腔长（900 至 2765 μm）的劈裂脊波导（RWG）激光器的测量结果显示出最先进的性能，在 20 摄氏度时具有接近 98.4% 的高内量子效率（eta(i)）和接近 1.01 cm(-1) 的低内光损耗（α(i)）。 20 至 50 摄氏度的特征温度为 245 K (T-0) 和 663 K (T-1)，并且还在 20 至 80 摄氏度的范围内研究了 T-0 和 T-1 的腔长相关行为。此外，该激光器结构在 20 摄氏度下获得了 77 A/cm(2)/QW 的低透明电流密度 (J(tr))，这是迄今为止报道的最低值之一。 1.06μm InGaAs/GaAs 半导体激光器。
High-performance 1.06-mu m InGaAs/GaAs double-quantum-well (DQW) asymmetric herero-structure semiconductor lasers have been designed, fabricated and characterized. The laser structure, grown by metal-organic chemical vapor deposition (MOCVD), mainly consists of compositionally graded p-AlxGa1-xAs upper cladding layers, a p-AlxGa1-xAs upper waveguide layer, a 1.06-mu m InGaAs/GaAs DQW active region, an un-doped In1-xGaxAsyP1-y lower waveguide layer, and compositionally graded n-doped In1-xGaxAsyP1-y lower cladding layers. Measurement results of the as-cleaved ridge waveguide (RWG) lasers with a contact ridge width of 25 mu m and different cavity lengths (900 to 2765 mu m) demonstrated state-of-the-art performances with a high internal quantum efficiency (eta(i)) of similar to 98.4% and a low internal optical loss (alpha(i)) of similar to 1.01 cm(-1) at 20 degrees C. The laser has demonstrated high characteristic temperatures of 245 K (T-0) and 663 K (T-1) from 20 to 50 degrees C, and the cavity length dependent behaviour of T-0 and T-1 has also been investigated from 20 to 80 degrees C. Furthermore, a low transparency current density (J(tr)) of 77 A/cm(2)/QW in this laser structure is obtained at 20 degrees C, which is among one of the lowest values reported so far for 1.06-mu m InGaAs/GaAs semiconductor lasers.