High quality AlN grown on SiC by metal organic chemical vapor deposition
High quality AlN grown on SiC by metal organic chemical vapor deposition
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DOI：
10.1063/1.2988323
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发表时间：
2008-11-10
影响因子：
4
通讯作者：
Nakamura, S.
中科院分区：
文献类型：
--
作者：
Chen, Z.;Newman, S.;Nakamura, S.
利用金属有机化学气相沉积技术，探索了AlN在SiC上二维和三维生长模式下的生长条件。通过在3D和2D生长模式之间交替，即调制生长（MG），获得了高质量的AlN层。在原子力显微镜（AFM）扫描中观察到没有台阶终止的长平行原子梯田，表明位错密度降低。x射线衍射摇摆曲线显示（002）和（102）反射的半最大宽（FWHM）分别为86和363弧秒，进一步证明了薄膜中的低位错密度。3D-2D MG还释放了AlN薄膜中的一些拉伸应变，使其能够在SiC衬底上生长厚的、无裂纹的AlN。
Growth conditions for AlN in two dimensional (2D) and three dimensional (3D) growth modes were explored on SiC using metal organic chemical vapor deposition. High quality AlN layers were obtained by alternating between 3D and 2D growth modes, referred to as modulation growth (MG). Long parallel atomic terraces without step terminations were observed in atomic force microscopy (AFM) scans of MG AlN, indicating a reduced dislocation density. X-ray diffraction rocking curves yielded full widths at half maximum (FWHM) of 86 and 363 arc sec for the (002) and (102) reflections, respectively, giving further evidence of low dislocation density in the film. 3D-2D MG also releases some of the tensile strain in the AlN film, enabling the growth of thick, crack-free AlN on SiC substrates.