Reduced lateral leakage losses of TM-like modes in silicon-on-insulator ridge waveguides.
Reduced lateral leakage losses of TM-like modes in silicon-on-insulator ridge waveguides.
复制标题
减少绝缘体上硅脊形波导中类 TM 模式的横向泄漏损耗。
DOI：
10.1364/ol.33.002008
复制
发表时间：
2008
期刊：
影响因子：
3.6
通讯作者：
K. Saitoh
中科院分区：
文献类型：
--
作者：
M. Koshiba;K. Kakihara;K. Saitoh
We numerically investigate the lateral leakage loss behavior for TM-like modes in silicon-on-insulator ridge waveguides. In order to improve the leakage loss properties, we propose a novel ridge waveguide structure where a dimple is introduced at the ridge center. It is shown that the ridge waveguide with a dimple is both low loss and fabrication tolerant. This behavior is predicted by not only an accurate finite-element-based analysis but also a simple, phenomenological effective-index-based analysis.
