Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
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DOI：
10.1143/jjap.46.115
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发表时间：
2007-01
影响因子：
1.5
通讯作者：
T. Fujii;Norio Tsuyukuchi;Y. Hirose;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
中科院分区：
文献类型：
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作者：
T. Fujii;Norio Tsuyukuchi;Y. Hirose;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
通过模拟和实验确定了采用p型GaN栅接触的p-GaN/u-AlxGa1-xN/u-GaN异质结场效应晶体管(JHFET)增强模工作所需的详细器件参数。通过改变非故意掺杂的AlxGa1-xN势垒层厚度和AlN摩尔分数x可以精确控制阈值电压。
Detailed device parameters necessary for the enhancement-mode operation of p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors (JHFETs) using p-type GaN gate contacts are determined by both simulation and experiments. Threshold voltage can be precisely controlled by changing the unintentionally doped AlxGa1-xN barrier layer thickness and AlN molar fraction x.