Spin-dependent transmission of electrons through the ferromagnetic metal base of a hot-electron transistorlike system
Spin-dependent transmission of electrons through the ferromagnetic metal base of a hot-electron transistorlike system
复制标题
DOI：
10.1103/physrevlett.80.2425
复制
发表时间：
1998-03-16
影响因子：
8.6
通讯作者：
Schuhl, A
中科院分区：
文献类型：
--
作者：
Filipe, A;Drouhin, HJ;Schuhl, A
A quasimonoenergetic spin-polarized electron beam, emitted in vacuum from a GaAs photocathode, is injected into a thin ferromagnetic metal layer deposited on an n-doped GaAs substrate. The current transmitted through this Schottky barrier is measured. The striking feature of this hot-electron transistorlike system is a current gain spin dependency as high as 20%. The measured variations of the current gain and its spin dependency with the injection energy are well explained by a very simple analytical model describing the transport of hot electrons in metallic thin films.
