Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors
Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors
复制标题
用于薄膜晶体管的低温溶液处理氧化锆栅极绝缘体
DOI：
10.1109/ted.2013.2278206
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发表时间：
2013-10-01
影响因子：
3.1
通讯作者：
Zhang Jianhua
中科院分区：
文献类型：
--
作者：
Li Xifeng;Xin Enlong;Zhang Jianhua
在200 mm x 200 mm的玻璃衬底上，使用旋涂技术在300 ℃的低退火温度下制造透明非晶铟镓锌氧化物薄膜晶体管（TFT）。溶液处理的高介电氧化锆介电层，其非晶结构和光滑的表面，被用来降低TFT的工作电压。所得到的TFT在300 ℃的最高工艺温度下制造，并且具有0.8cm（2）/Vs的饱和迁移率、10（4）的开/关比和0.1V的阈值电压。
Transparent amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) were fabricated using spin-coating technique at a low annealing temperature of 300 degrees C on the 200 mm x 200 mm glass substrate. Solution-processed high-dielectric zirconium oxide dielectric layer, with its amorphous structure and smooth surface, was used to reduce the TFT operating voltage. The resulting TFT was produced with a maximum process temperature of 300 degrees C, and had a saturation mobility of 0.8 cm (2)/V s, an ON/OFF ratio of 10(4), and a threshold voltage of 0.1 V.