Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate
Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate
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Si 衬底上 AlGaN/GaN 高电子迁移率晶体管 8600 K 电子温度的观测
DOI：
10.1088/0268-1242/31/3/035007
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Akio Wakejima and Takashi Egawa
中科院分区：
文献类型：
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作者：
Tomotaka Narita;Yuichi Fujimoto;Akio Wakejima and Takashi Egawa
通过电致发光（EL）的光谱测量，研究了硅基上AlGaN/GaN高电子迁移率晶体管（HEMTs）的电子温度（T e）。EL谱遵循麦克斯韦-玻尔兹曼分布，在GaN的带隙中没有观测到等效能量的信号。这些实验结果表明，EL是由带内跃迁主导的。在漏极电压为60 V时，AlGaN/GaN hemt的最高te为8600 K。实验结果与先前蒙特卡罗模拟预测的结果一致。
The electron temperature (T e) in AlGaN/GaN high electron mobility transistors (HEMTs) on Si was studied by spectroscopic measurements of its electroluminescence (EL). The EL spectrum has been followed by the Maxwell–Boltzmann distribution and no signal at equivalent energy as a band-gap of GaN has been observed. These experimental results imply that the EL is dominated by an intra-band transition. The highest T e of 8600 K in AlGaN/GaN HEMTs was extracted at the drain voltage of 60 V. The experimental results are in agreement with results previously predicted by a Monte Carlo simulation.