Organometallic chemistry on silicon surfaces: formation of functional monolayers bound through Si-C bonds
Organometallic chemistry on silicon surfaces: formation of functional monolayers bound through Si-C bonds
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DOI：
10.1039/a900108e
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发表时间：
1999-06-21
影响因子：
4.9
通讯作者：
Buriak, JM
中科院分区：
文献类型：
--
作者：
Buriak, JM
硅芯片构成了现代计算机的支柱，但直到最近，这种技术上必不可少的材料的表面化学性质仍然相对未被探索。随着硅片上器件尺寸的缩小（向千兆级集成），由于表面原子/体积的比例上升，表面特性在器件的正常功能中起着越来越重要的作用。虽然表面氧化物迄今为止是主要的钝化途径，但人们对精确定制界面特性有着浓厚的兴趣，不仅适用于微电子，还适用于其他应用，包括传感器、MEMS和生物活性表面。因此，有机金属和有机化学对于合成功能性的、可修饰的单分子层（通过硅碳键结合到非氧化硅表面）变得至关重要。介绍了在平面和光致发光多孔硅上通过硅-碳键制备单分子膜的最新方法。强调了大多数有机金属/有机化学家可以使用的湿化学技术，但最近使用特高压条件的发展也受到关注。
Silicon chips form the backbone of modern computing and yet until recently, the surface chemistry of this technologically essential material has remained relatively unexplored. As the size of devices on silicon wafers shrink (towards gigascale integration), the surface characteristics play increasingly crucial roles in the proper functioning of the device since the ratio of surface atoms/bulk escalates. While surface oxide has served thus far as the main passivation route, there is strong interest in precisely tailoring the interface properties, not only for microelectronics, but other applications including sensors, MEMS and biologically active surfaces. As a result, organometallic and organic chemistry has become essential for the synthesis of functional, modifiable monolayers, bound to non-oxidized silicon surfaces through silicon-carbon bonds. The latest approaches towards preparation of monolayers through Si-C bonds on both flat and photoluminescent porous silicon are described. Wet chemical techniques, accessible to most organometallic/organic chemists are highlighted, but recent developments using UHV conditions also receive attention.