Perpendicular magnetic anisotropy in Mn2CoAl thin film
Perpendicular magnetic anisotropy in Mn2CoAl thin film
复制标题
Mn2CoAl薄膜中的垂直磁各向异性
DOI：
10.1063/1.4939934
复制
发表时间：
2016-01-01
期刊：
影响因子：
1.6
通讯作者：
Shan, R.
中科院分区：
文献类型：
--
作者：
Sun, N. Y.;Zhang, Y. Q.;Shan, R.
Heusler化合物Mn_2CoAl（MCA）由于具有高电阻、半导体特性以及作为低磁矩无自旋带隙材料的可能性而受到人们的广泛关注。采用磁控溅射法在MgO（100）衬底上制备了Mn 2CoAl外延薄膜。薄膜的输运性质表现出类相变行为。此外，我们的研究还表明，Mn 2CoAl/MgO界面上Mn-O和Co-O键合可以在非常薄的Mn 2CoAl薄膜中诱导出垂直磁各向异性（PMA），这与最近的理论预测相吻合。PMA和低饱和磁矩原则上可以在低电流密度下产生大的自旋转移力矩，因此我们的工作可能会将一些未曾预料到的Heusler化合物引入到自旋电子学的研究领域，如畴壁运动和电流诱导磁化反转。
Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.