Crystal Growth Behaviors of Silicon during Melt Growth Processes
Crystal Growth Behaviors of Silicon during Melt Growth Processes
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DOI：
10.1155/2012/169829
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发表时间：
2012-03
影响因子：
3.2
通讯作者：
K. Fujiwara
中科院分区：
文献类型：
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作者：
K. Fujiwara
由于硅多晶锭在太阳能电池中的应用越来越广泛，提高其晶体质量势在必行。因此，在Si多晶锭中，对宏观和微观结构、晶粒尺寸、晶粒取向、晶界、位错/亚晶界和杂质的精细控制是必要的。因此，了解熔体生长过程中的晶体生长机制对于开发生产高质量太阳能电池用硅多晶锭的良好技术至关重要。在这篇综述中，晶体生长机制，包括形态转变的晶体-熔体界面，晶界的形成，平行孪晶的形成，和小面枝晶生长的基础上，在原位观察的实验结果进行了讨论。
It is imperative to improve the crystal quality of Si multicrystal ingots grown by casting because they are widely used for solar cells in the present and will probably expand their use in the future. Fine control of macro- and microstructures, grain size, grain orientation, grain boundaries, dislocation/subgrain boundaries, and impurities, in a Si multicrystal ingot, is therefore necessary. Understanding crystal growth mechanisms in melt growth processes is thus crucial for developing a good technology for producing high-quality Si multicrystal ingots for solar cells. In this review, crystal growth mechanisms involving the morphological transformation of the crystal-melt interface, grain boundary formation, parallel-twin formation, and faceted dendrite growth are discussed on the basis of the experimental results of in situ observations.